Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

نویسندگان

چکیده

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown high resistivity silicon substrate using III-V buffer layers. show low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized these substrates after the removal demonstrate coherent control and readout gatemon device relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{\mu s}$. Further, we infer junction transparency $0.4 - 0.9$ from analysis anharmonicity.

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ژورنال

عنوان ژورنال: Physical review applied

سال: 2022

ISSN: ['2331-7043', '2331-7019']

DOI: https://doi.org/10.1103/physrevapplied.18.034042