Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
نویسندگان
چکیده
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown high resistivity silicon substrate using III-V buffer layers. show low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized these substrates after the removal demonstrate coherent control and readout gatemon device relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{\mu s}$. Further, we infer junction transparency $0.4 - 0.9$ from analysis anharmonicity.
منابع مشابه
Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device
متن کامل
Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices mad...
متن کاملGate Oxides Grown on Deuterium-Implanted Silicon Substrate
Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1 x 1014/cm2 at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower en...
متن کاملBallistic reflection at a side-gate in a superconductor-semiconductor- superconductor structure
We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage applied to the gate. This new kind of tuneable junction can be used for applications and allows several fundamental questions related to the transport mechanis...
متن کاملInterplay of Phonon and Exciton-Mediated Superconductivity in Hybrid Semiconductor-Superconductor Structures.
We predict a strong enhancement of the critical temperature in a conventional Bardeen-Cooper-Schrieffer (BCS) superconductor in the presence of a bosonic condensate of exciton polaritons. The effect depends strongly on the ratio of the cutoff frequencies for phonon and exciton-polariton mediated BCS superconductivity, respectively. We also discuss a possible design of hybrid semiconductor-super...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical review applied
سال: 2022
ISSN: ['2331-7043', '2331-7019']
DOI: https://doi.org/10.1103/physrevapplied.18.034042